Our Innovations

Electronic Devices:

Our mission is to develop next-generation power devices such as HEMTs, diodes, and polar junctions, utilizing wide and ultra-wide bandgap single crystals. By leveraging advanced materials design, precise control over deposition processes, and innovative device architecture, we aim to surpass current limitations in power devices. Our focus is on significantly reducing power consumption while achieving extremely high breakdown voltages, with a particular emphasis on III-V based materials systems.

Related Publications:

Record> 10 MV/cm mesa breakdown fields in Al0. 85Ga0. 15N/Al0. 6Ga0. 4N high electron mobility transistors on native AlN substrates. D Khachariya, S Mita, P Reddy, S Dangi, J H Dycus, P Bagheri et al. Appl. Phys. Lett. 120, 172106 (2022).
GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions. D Szymanski, D Khachariya, T B Eldred, P Bagheri et al. J. Appl. Phys. 131, 015703 (2022).
Demonstration of near-ideal Schottky contacts to Si-doped AlN. C E Quiñones, D Khachariya, P Bagheri et al. Appl. Phys. Lett. 123, 172103 (2023).
Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN. P Reddy, D Khachariya, W Mecouch, M H Breckenridge, P Bagheri et al. Appl. Phys. Lett. 119, 182104 (2021).

2DEG

Optical Devices:

Our trajectory is focused on creating next-generation photonic and quantum devices using III-V single crystals with tunable wide bandgaps ranging from 0.6 eV to 6.2 eV, applicable from infrared to ultraviolet. By achieving precise control over emitters, we aim to realize single-photon emitters within these single crystals, positioning them as potential quantum emitters.

Related Publications:

Tracking of point defects in the full compositional range of AlGaN via photoluminescence spectroscopy. J. H. Kim, P Bagheri et al. physica status solidi (a) 220, 8 (2023).
On the conduction mechanism in compositionally graded AlGaN. S Rathkanthiwar, P Bagheri et al. Appl. Phys. Lett. 121, 072106 (2022).
Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates. P Reddy, W Mecouch, M H Breckenridge, D Khachariya, P Bagheri et al. physica status solidi (RRL)–Rapid Research Letters 16, 6 (2022).
On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters. A Jadhav, P Bagheri et al. Semicond. Sci. Technol. 37 015003 (2022).

Tunable wavelength

III: Al, Ga, Sc, Y

Semiconductor Thin Films:

Our mission is to develop single-crystal thin films via MOCVD with precise control over their electrical, optical, and structural properties. Achieving this goal requires meticulous management of the MOCVD toolbox and growth parameters. We are developing a systematic framework through thermodynamic models to utilize growth parameters effectively and achieve desired properties, including the formation of point defects, dislocations, surface morphology, and growth rates.

Related Publications:

High electron mobility in AlN: Si by point and extended defect management. P Bagheri et al. J. Appl. Phys. 132, 185703 (2022).
Low resistivity, p-type, N-polar GaN achieved by chemical potential control. S Rathkanthiwar, D Szymanski, D Khachariya, P Bagheri et al. Appl. Phys. Express 15 081004 (2022).
Doping and compensation in heavily Mg doped Al-rich AlGaN films. P Bagheri et al. Appl. Phys. Lett. 120, 082102 (2022).
A pathway to highly conducting Ge-doped AlGaN. P Bagheri et al. J. Appl. Phys. 130, 205703 (2021).
The role of chemical potential in compensation control in Si: AlGaN. S Washiyama, P Reddy, B Sarkar, M H Breckenridge, Q Guo, P Bagheri et al. J. Appl. Phys. 127, 105702 (2020).

Anchor 1

Medical Devices:

Rooted in a vision of excellence and progress, NovaTech Innovations was founded with a lofty purpose - to catalyze revolutionary advancements in the landscape of Medical Devices. Our unyielding commitment is directed towards crafting cutting-edge technologies in select domains, exploring uncharted market niches, and introducing pioneering devices renowned for superior functionality, impeccable precision, and broad availability. Our ultimate aim is to drive a paradigm shift in the healthcare sector, ushering in a new era of transformative innovation.

Point-of-Care (POC) Diagnostics (e.g. autoimmune, epidemics, and cardiac).
Wearable Technologies for Analyzing and Monitoring Interstitial Fluid.
Scanning (next generation MRI, CT, and Ultrasound).

Our methodology is rooted in the technical analysis of the market, competitive landscape, voice of the customer (VoC), and understanding of competitive technologies in order to identify market gaps. This not only assists in shaping the vision and value proposition of new products, but also helps define their intended use and establish the business case.

This process involves delineating the "User Need" based on the product's "Intended Use". We then assume responsibility for the execution by specifying Design Controls, compiling subcomponent specifications (PRD), creating conceptual designs, and coordinating activities through a phased gate system aimed at additional integration strategies and product evolution. This journey involves progressing towards alpha and beta clinical versions, culminating in a smooth path to commercial market release.

Related Publications:

Systems and methods for immobilizing a target protein. H Yaghoubi, A Takshi, JT Beatty. US Patent Pub. No.: 20220204650; Pub. Date: June 30, 2022
SYSTEM AND METHODS FOR REMOTE ASSESSMENT OF A SAMPLE ASSAY FOR DISEASE DIAGNOSTICS. H Yaghoubi et al. US Patent Pub. No.: US 2021/0373008 Pub. Date: Dec 2, 2021.
SOFTWARE AND ALGORITHMS FOR USE IN REMOTE ASSESSMENT OF DISEASE DIAGNOSTICS. H Yaghoubi et al. US Patent Pub. No.: US 2021/0374959 Pub. Date: Dec 2, 2021.
DEVICES AND KITS FOR DETECTING ANALYTES OF INTEREST AND METHODS OF USING THE SAME. V Pini, A Stassinopoulos, M Mösl, J A Heredero, C A Rodriguez, A Thon, H Yaghoubi et al. US Patent Pub. No.: US 2024/0133881 Pub. Date: Apr 25, 2024.
Large photocurrent response and external quantum efficiency in biophotoelectrochemical cells incorporating reaction center plus light harvesting complexes. H Yaghoubi, E LaFalce, D Jun, X Jian et al. - Biomacromolecules 2015, 16, 4, 1112–1118.
Bio-Phototransistors with Immobilized Photosynthetic Proteins A Takshi, H Yaghoubi et al. Electronics 2020, 9(10), 1709.

Our Innovations

Record> 10 MV/cm mesa breakdown fields in Al0. 85Ga0. 15N/Al0. 6Ga0. 4N high electron mobility transistors on native AlN substrates. D Khachariya, S Mita, P Reddy, S Dangi, J H Dycus, P Bagheri et al. Appl. Phys. Lett. 120, 172106 (2022).

GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions. D Szymanski, D Khachariya, T B Eldred, P Bagheri et al. J. Appl. Phys. 131, 015703 (2022).

Demonstration of near-ideal Schottky contacts to Si-doped AlN. C E Quiñones, D Khachariya, P Bagheri et al. Appl. Phys. Lett. 123, 172103 (2023).

Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN. P Reddy, D Khachariya, W Mecouch, M H Breckenridge, P Bagheri et al. Appl. Phys. Lett. 119, 182104 (2021).

High electron mobility in AlN: Si by point and extended defect management. P Bagheri et al. J. Appl. Phys. 132, 185703 (2022).

Low resistivity, p-type, N-polar GaN achieved by chemical potential control. S Rathkanthiwar, D Szymanski, D Khachariya, P Bagheri et al. Appl. Phys. Express 15 081004 (2022).

Doping and compensation in heavily Mg doped Al-rich AlGaN films. P Bagheri et al. Appl. Phys. Lett. 120, 082102 (2022).

A pathway to highly conducting Ge-doped AlGaN. P Bagheri et al. J. Appl. Phys. 130, 205703 (2021).

The role of chemical potential in compensation control in Si: AlGaN. S Washiyama, P Reddy, B Sarkar, M H Breckenridge, Q Guo, P Bagheri et al. J. Appl. Phys. 127, 105702 (2020).