• Devices and kits for detecting analytes of interest and methods of using the same. V Pini, A Stassinopoulos, M Mösl, J A Heredero, C A Rodriguez, A Thon, H Yaghoubi et al. US Patent Pub. No.: US 2024/0133881 Pub. Date: Apr 25, 2024. https://patents.google.com/patent/US20240133881A1/en​​

• Software and algorithms for use in remote assessment of disease diagnostics. H Yaghoubi et al. US Patent Pub. No.: US18/456,451 Pub. Date: Dec 21, 2023. https://patents.google.com/patent/US11783563B2/en

• Anderson transition in compositionally graded p-AlGaN. S Rathkanthiwar, P Reddy, C E Quiñones, J Loveless, M Kamiyama, P Bagheri et al. J. Appl. Phys. 134, 195705 (2023).
  https://doi.org/10.1063/5.0176419

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• Software and algorithms for use in remote assessment of disease diagnostics. H Yaghoubi et al. US Patent Pub. No.: US11783563B2 Pub. Date: Oct 10, 2023. https://patents.google.com/patent/US11783563B2/en 

• Demonstration of near-ideal Schottky contacts to Si-doped AlN. C E Quiñones, D Khachariya, P Bagheri et al. Appl. Phys. Lett. 123, 172103 (2023). 
  https://doi.org/10.1063/5.0174524

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• High p-conductivity in AlGaN enabled by polarization field engineering. S Rathkanthiwar, P Reddy, B Moody, C Quiñones-García, P Bagheri et al. Appl. Phys. Lett. 122, 152105 (2023). 
  https://doi.org/10.1063/5.0143427

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• Tracking of point defects in the full compositional range of AlGaN via photoluminescence spectroscopy. J. H. Kim, P Bagheri et al. physica status solidi (a) 220, 8 (2023).
  https://doi.org/10.1002/pssa.202200390​​​​​​​​​​​

• Color centers in AlN as qubit candidates: point defect management. R Collazo, P Bagheri et al. Proceedings Volume PC12430, Quantum Sensing and Nano Electronics and Photonics XIX; PC124300Y (2023). https://doi.org/10.1117/12.2652657

• High conductivity and low activation energy in p-type AlGaN. S Rathkanthiwar, P Bagheri et al. Appl. Phys. Lett. 122, 092103 (2023). 
  https://doi.org/10.1063/5.0141863​​​​​​​​

• High electron mobility in AlN: Si by point and extended defect management. P Bagheri et al. J. Appl. Phys. 132, 185703 (2022). 
  https://doi.org/10.1063/5.0124589

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• On the conduction mechanism in compositionally graded AlGaN. S Rathkanthiwar, P Bagheri et al. Appl. Phys. Lett. 121, 072106 (2022). 
  https://doi.org/10.1063/5.0100756

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• Low resistivity, p-type, N-polar GaN achieved by chemical potential control. S Rathkanthiwar, D Szymanski, D Khachariya, P Bagheri et al. Appl. Phys. Express 15 081004 (2022).
  DOI 10.35848/1882-0786/ac8273

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• Systems and methods for immobilizing a target protein. H Yaghoubi et al. US Patent Pub. No.: US17/498,438; Pub. Date: June 30, 2022. https://patents.google.com/patent/US20220204650A1/en​​​

• Large‐Area, Solar‐Blind, Sub‐250 nm Detection AlGaN Avalanche Photodiodes Grown on AlN Substrates. P Reddy, W Mecouch, M H Breckenridge, D Khachariya, P Bagheri et al. physica status solidi (RRL)–Rapid Research Letters 16, 6 (2022). 
  https://doi.org/10.1002/pssr.202100619​​​​​​​​​​​​

• Record> 10 MV/cm mesa breakdown fields in Al0. 85Ga0. 15N/Al0. 6Ga0. 4N high electron mobility transistors on native AlN substrates. D Khachariya, S Mita, P Reddy, S Dangi, J H Dycus, P Bagheri et al. Appl. Phys. Lett. 120, 172106 (2022). 
  https://doi.org/10.1063/5.0083966​​​​​​​​​

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• Point-defect management in homoepitaxially grown Si-doped GaN by MOCVD for vertical power devices. S Rathkanthiwar, P Bagheri et al. Appl. Phys. Express 15 051003 (2022). 
  DOI 10.35848/1882-0786/ac6566

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• Doping and compensation in heavily Mg doped Al-rich AlGaN films. P Bagheri et al. Appl. Phys. Lett. 120, 082102 (2022). 
  https://doi.org/10.1063/5.0082992

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• GaN lateral polar junction arrays with 3D control of doping by supersaturation modulated growth: A path toward III-nitride superjunctions. D Szymanski, D Khachariya, T B Eldred, P Bagheri et al. J. Appl. Phys. 131, 015703 (2022). 
  https://doi.org/10.1063/5.0076044

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• System and methods for remote assessment of a sample assay for disease diagnostics. H Yaghoubi et al. US Patent Pub. No.: US 2021/0373008 Pub. Date: Dec 2, 2021.
  https://patents.google.com/patent/US20210373008A1/en

• A pathway to highly conducting Ge-doped AlGaN. P Bagheri et al. J. Appl. Phys. 130, 205703 (2021). 
  https://doi.org/10.1063/5.0071791

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• On electrical analysis of Al-rich p-AlGaN films for III-nitride UV light emitters. A Jadhav, P Bagheri et al. Semicond. Sci. Technol. 37 015003 (2022). 
  DOI 10.1088/1361-6641/ac3710

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• Study on avalanche breakdown and Poole–Frenkel emission in Al-rich AlGaN grown on single crystal AlN. P Reddy, D Khachariya, W Mecouch, M H Breckenridge, P Bagheri et al. Appl. Phys. Lett. 119, 182104 (2021). 
  https://doi.org/10.1063/5.0062831

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• On the Ge shallow-to-deep level transition in Al-rich AlGaN. P Bagheri et al. J. Appl. Phys. 130, 055702 (2021). 
  https://doi.org/10.1063/5.0059037

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• Temperature dependence of electronic bands in Al/GaN by utilization of invariant deep defect transition energies. J H Kim, P Bagheri et al. Appl. Phys. Lett. 119, 022101 (2021). 
  https://doi.org/10.1063/5.0055409

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• High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN. M H Breckenridge, P Bagheri et al. Appl. Phys. Lett. 118, 112104 (2021). 
  https://doi.org/10.1063/5.0042857

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• Weak localization and dimensional crossover in compositionally graded AlxGa1− xN. A Al-Tawhid, A-Al Shafe, P Bagheri et al. Appl. Phys. Lett. 118, 082101 (2021). 
  https://doi.org/10.1063/5.0042098

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• Self-compensation in heavily Ge doped AlGaN: A comparison to Si doping. S Washiyama, K J Mirrielees, P Bagheri et al. Appl. Phys. Lett. 118, 042102 (2021). 
  https://doi.org/10.1063/5.0035957

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• High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing. H Breckenridge, J Tweedie, P Reddy, Y Guan, P Bagheri et al. Appl. Phys. Lett. 118, 022101 (2021). 
  https://doi.org/10.1063/5.0038628

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• Impact of impurity-based phonon resonant scattering on thermal conductivity of single crystalline GaN. P Bagheri et al. Appl. Phys. Lett. 117, 082101 (2020). 
  https://doi.org/10.1063/5.0018824

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• Bio-Phototransistors with Immobilized Photosynthetic Proteins A Takshi, H Yaghoubi et al. Electronics 2020, 9(10), 1709. https://doi.org/10.3390/electronics9101709

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• The nature of the DX state in Ge-doped AlGaN. P Bagheri et al. Appl. Phys. Lett. 116, 222102 (2020). 
  https://doi.org/10.1063/5.0008362

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• The role of chemical potential in compensation control in Si: AlGaN. S Washiyama, P Reddy, B Sarkar, M H Breckenridge, Q Guo, P Bagheri et al. J. Appl. Phys. 127, 105702 (2020). 
  https://doi.org/10.1063/1.5132953

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• Ion-sensitive field-effect transistors with Si3N4 and TaO2 gate insulator for studying self-assembly of photosynthetic proteins. A Takshi, F Khorramshahi, H Yaghoubi et al. Proceedings Volume 11096, Organic and Hybrid Sensors and Bioelectronics XII; 1109607 (2019). 
  https://doi.org/10.1117/12.2527358​​​​​​​​​​

• (Invited) Understanding Redox Shuttle Photocatalysis in Z-Scheme Solar Water Splitting Reactors. S Keene, W Gaieck, A Zhang, H. Yaghoubi et al. 2018 ECS - The Electrochemical Society Meet. Abstr. MA2018-01 1890
  DOI 10.1149/MA2018-01/31/1890​​​

• (Invited) Recent Progress in Fundamental Photoelectrochemical Studies Relevant to New Low-Cost Designs for Z-Scheme Solar Water Splitting Reactors. W Gaieck, K Tkacz, C D. Sanborn, Y Shao, S Breen, H Yaghoubi et al., 2017 ECS - The Electrochemical Society 2017 Meet. Abstr. MA2017-01 1526. 
  DOI 10.1149/MA2017-01/32/1526​​

• Electrochemical Field-Effect Transistor Utilization to Study the Coupling Success Rate of Photosynthetic Protein Complexes to Cytochrome c. A Takshi, H Yaghoubi et al. Biosensors 2017, 7(2), 16.
  https://doi.org/10.3390/bios7020016

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• A ZnO nanowire bio-hybrid solar cell. H Yaghoubi et al. 2017 Nanotechnology 28 054006. 
  DOI 10.1088/1361-6528/28/5/054006

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• Bipolar Electrodeposition: A Wireless Method for Deposition of Electrocatalysts Onto Semiconducting Particles. W Gaieck, K Tkacz, H Yaghoubi et al. Electrochemical Society Meeting Abstracts 229 2016 Meet. Abstr. MA2016-01 1947. 
  DOI 10.1149/MA2016-01/38/1947​​

• Evaluation of State-of-the-Art Visible-Light-Absorbing Photocatalysts for Use in New Particle Slurry Reactors for Solar Water Splitting. H Yaghoubi et al. Electrochemical Society Meeting Abstracts 229 2016 Meet. Abstr. MA2016-01 1898.
  DOI 10.1149/MA2016-01/38/1898

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• Large photocurrent response and external quantum efficiency in biophotoelectrochemical cells incorporating reaction center plus light harvesting complexes. H Yaghoubi et al. Biomacromolecules 2015, 16, 4, 1112–1118.
  DOI 10.35848/1882-0786/ac8273

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• Photoactive supercapacitors for solar energy harvesting and storage. A Takshi, H Yaghoubi et al. Journal of Power Sources Volume 275, 2015, Pages 621-626.
  https://doi.org/10.1016/j.jpowsour.2014.10.110​​​

• Toward a Visible Light-Driven Photocatalyst: The Effect of Midgap-States-Induced Energy Gap of Undoped TiO2 Nanoparticles. H Yaghoubi et al. Acs Catalysis 5, 1 2015.
  https://doi: 10.1021/cs501539q

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• Bio-Photoelectrochemical Solar Cells Incorporating Reaction Center and Reaction Center Plus Light Harvesting Complexes. H Yaghoubi Graduate Thesis and Dissertation (2015).
  https://core.ac.uk/download/pdf/154471222.pdf​​​

• Hybrid Wiring of the Rhodobacter sphaeroides Reaction Center for Applications in Bio-photoelectrochemical Solar Cells. H Yaghoubi et al. J. Phys. Chem. C 2014, 118, 41, 23509–23518. 
  https://doi.org/10.1021/jp507065u

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• Electrochemical detection of piezoelectric effect from misaligned zinc oxide nanowires grown on a flexible electrode. H Ebrahimi, H Yaghoubi et al. Electrochimica Acta Volume 134, 10 July 2014, Pages 435-441. 
  https://doi.org/10.1016/j.electacta.2014.04.119​​

• The effect of surfactant-free TiO2 surface hydroxyl groups on physicochemical, optical and self-cleaning properties of developed coatings on polycarbonate. H Yaghoubi et al. 2013 J. Phys. D: Appl. Phys. 46 505316. 
  DOI 10.1088/0022-3727/46/50/505316

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• Application of poly (p-phenylene oxide) as blocking layer to reduce self-discharge in supercapacitors. T Tevi, H Yaghoubi et al. Journal of Power Sources Volume 24, 1 November 2013, Pages 589-596. 
  https://doi.org/10.1016/j.jpowsour.2013.04.150​​​​

• Self‐Cleaning Materials for Plastic and Plastic‐Containing Substrates. H Yaghoubi 2013 Self‐Cleaning Materials and Surfaces: A Nanotechnology Approach, Pages 153-202, John Wiley & Sons Ltd.
  https://doi.org/10.1002/9781118652336.ch6​​​

• The role of gold-adsorbed photosynthetic reaction centers and redox mediators in the charge transfer and photocurrent generation in a bio-photoelectrochemical cell. H Yaghoubi et al. J. Phys. Chem. C 2012, 116, 47, 24868–24877.
  https://doi.org/10.1021/jp306798p

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• Surface chemistry of atmospheric plasma modified polycarbonate substrates. H Yaghoubi et al. Applied Surface Science Volume 257, Issue 23, 15 September 2011, Pages 9836-9839. 
  https://doi.org/10.1016/j.apsusc.2011.06.034​​​​​​​

• Nanomechanical Properties of TiO2 Granular Thin Films. H Yaghoubi et al. ACS Appl. Mater. Interfaces 2010, 2, 9, 2629–2636. 
  https://doi.org/10.1021/am100455q

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• Self-cleaning TiO2 coating on polycarbonate: Surface treatment, photocatalytic and nanomechanical properties. H Yaghoubi et al. Surface and Coatings Technology Volume 204, Issues 9–10, 25 January 2010, Pages 1562-1568.
  https://doi.org/10.1016/j.surfcoat.2009.09.085